RFP2N12L Datasheet | Intersil

Data Sheet April 1999 File Number 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N12L is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is acplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09528. Features - 2A, 120V - rDS(ON) = 1.750Ω - Design Optimized for 5V...