RFP4N05 Datasheet | Intersil

RFP4N05, RFP4N06 June 1999 File Number 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. Features - 4A, 50V and 60V - rDS(ON) = 0.800Ω - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Symbol Ordering Information PART NUMBER RFP4N05...