2SD1819A - NPN Transistor

JCET

Key Features

High DC Current Gain.
Complementary to 2SB1218A.
Low Collector to Emitter Saturation Voltage.

2SD1819A npn transistor by JCET - Datasheet Preview

Datasheet Details

Part number	2SD1819A
Manufacturer	JCET
File Size	259.32 KB
Description	NPN Transistor
Datasheet	2SD1819A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SD1819A TRANSISTOR (NPN) FEATURES  High DC Current Gain  Complementary to 2SB1218A  Low Collector to Emitter Saturation Voltage APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 7 IC Collector Current 100 PC Collector Power Dissipation 150 RΘJA Thermal Resistance From Junction To Ambient 833 Tj Junction Temperature Tstg Storage Temperature 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ SOT–323 1. BASE 2. EMITTER 3.