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Transistor
2SD1819A
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1218A
2.1±0.1
Unit: mm
s Features
q q q
0.425
1.25±0.1
0.425
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings 60 50 7 200 100 150 150 –55 ~ +150
Unit V V V mA mA mW ˚C ˚C
0.7±0.1
0 to 0.1
0.2±0.
2SD1819A Datasheet
