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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4410 N-Channel 30-V(D-S) MOSFET
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch z Battery Switch
TO-2 51-3L
1. GATE 2. DRAIN 3. SOURCE
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Power Dissipation Maximum Power Dissipation
(note 1, Ta=25℃) PD
(note 2, Tc=25℃)
Thermal Resistance from Junction to Ambient (t≤10S)
RθJA
Operating Junction Temperature
TJ
Storage Temperature
Tstg
.
Value 30 ±20 7.5 1 15 125 150
-55 ~+150
Unit V A W
℃/W ℃
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CJD4410 Datasheet
