Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4435 P-Channel 30-V(D-S) MOSFET
V(BR)DSS
-30 9
RDS(on)MAX
24Pȍ#-9
35Pȍ#-9
-9.1$
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch z Battery Switch
TO-251-3L
1. GATE 2. DRAIN 3. SOURCE
MARKING
EQUIVALENT CIRCUIT
CJD4435= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage
Continuous Drain Current
Power Dissipation Maximum Power Dissipation
(note 1, Ta=25℃) PD
(note 2, Tc=25℃)
Thermal Resistance...