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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK2305 P-Channel 8-V(D-S) MOSFET
V(BR)DSS
-12V
RDS(on)MAX
45mΩ@-4.5V 60mΩ@-2.5V 90mΩ@-1. 8V
ID
-4.1A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
FEATURE TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter
MARKING:
Equivalent Circuit
Solid dot = Green molding compound device, if none,the normal device.
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t≤10s) Junction Temperature Storage Temperature
Symbol
VDS VGS ID IS PD RθJA TJ TSTG
Value
-12 ±8 -4.1 -0.8 0.4 312.
CJK2305 Datasheet
