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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3400A N-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
30 V
RDS(on)MAX
32mΩ@10V 38mΩ@4.5V
45mΩ@2.5V
ID
5.8A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
FEATURE
APPLICATION
z High dense cell design for extremely low RDS(ON)
z Load/Power Switching
z Exceptional on-resistance and maximum DC current capability z Interfacing Switching
MARKING
Equivalent Circuit
Solid dot = Green molding compound device, if none,the normal device.
CJK3400A Datasheet
