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CJK3407 - P-Channel MOSFET

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Description

The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number CJK3407
Manufacturer JCET
File Size 775.08 KB
Description P-Channel MOSFET
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate MOSFETS CJK34 07 P-Channel 30-V(D-S) MOSFET V(BR)DSS -30V RDS(on)MAX 60mΩ@-10 V 87mΩ@-4.5V ID -4.1A SOT-23-3L 1. GATE 2. SOURCE 3. DRAIN D General Description The CJK3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ TSTG Value -30 ±20 -4.
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