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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3415 P-Channel 20-VV((DD--SS))MMOOSSFFEETT
V(BR)DSS
-20V
RDS(on)MAX
50mΩ@-4.5V 60mΩ@-2.5V 73mΩ@-1. 8V
ID
-4.0A
FEATURE Excellent RDS(ON), low gate charge,low gate voltages
APPLICATIONS Load switch and in PWM applicatopns
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
MARKING: R15
Equivalent Circuit
D G
S
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (t≤10s) Maximum Power Dissipation (t≤10s) Thermal Resistance from Junction to Ambient Operating Junction Temperature Storage Temperature
Symbol
VDS VGS ID PD RθJA TJ TSTG
Value
-20 ±8 -4.0 0.30 417 150 -55 ~+150
Unit
V
A W ℃/W ℃ ℃
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CJK3415 Datasheet
