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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate MOSFETS
CJK3401A P-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
-30V
RDS(on)MAX
60 mΩ@-10V 70 mΩ@-4.5V 85 mΩ@-2.5V
ID
-4.2A
SOT-23-3L
1. GATE 2. SOURCE 3. DRAIN D
FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum
DC current capability
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
MARKING
Equivalent Circuit
D
Solid dot = Green molding compound device, if none,the normal device.
CJK3401A Datasheet
