CJPF08N60 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX 1.3Ω@10V 8A TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJPF08N60= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , Duration 5 seconds Symbol VDS VGS ID IDM EAS PD RθJA TJ, TSTG .cj-elec. Value 600 ±30 8 32 250 2 62.5 -55 ~+150 Unit V A m J W ℃/W ℃ C,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter Symbol Test...