CJPF08N65 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N65 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX 650V 1.4Ω@10V 8A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE - High Current Rating - Lower RDS(on) - Lower Capacitance - Lower Total Gate Charge - Tighter VSD Specifications - Avalanche Energy Specified TO-220F 1. GATE 2. DRAIN 3. SOURCE MARKING EQUIVALENT CIRCUIT CJPF08N65= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds Symbol VDS VGS ID IDM EAS RθJA TJ, TSTG Value 650 ±30 8 32 250 62.5 -55 ~+150 Unit V A m J ℃/W...