CJPF08N80 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS V(BR)DSS 800V N-Channel Power MOSFET RDS(on)MAX 1.45Ω@10V 8A TO-220F GENERAL DESCRIPTION The CJPF8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and mutation mode. The CJPF8N80 is generally applied in high efficiency switch mode power supplies. FEATURE z Lowe gate charge z Lowe Crss z Fast switching z 100% avalanche tested z Improved dv/dt capability z Ro HS product 1. GATE 2. DRAIN 3. SOURCE MARKING EQUIVALENT CIRCUIT CJPF08N80= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum Lead Temperature for Soldering Purposes , 1/8”from Case for 5 Seconds Symbol VDS VGS ID IDM EAS RθJA TJ TSTG Value 800 ±30 8 32 850 62.5 150 -55 ~+150 Unit V A m J ℃/W ℃ .cj-elec. B,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise...