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KMA4D5P20X - P-Ch Trench MOSFET

Datasheet Summary

Description

It’s mainly suitable for battery pack or power management in cell phone, and PDA.

Features

  • VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max. ) @ VGS=-4.5V,. ID=-4.5A : RDS(ON)=110m (Max. ) @ VGS=-2.5V,. ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) G 1 3 6 4 B1 B C E D1 D D2 DIM A B B1 C D D1 D2 E F G.

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Datasheet preview – KMA4D5P20X

Datasheet Details

Part number KMA4D5P20X
Manufacturer KEC
File Size 456.33 KB
Description P-Ch Trench MOSFET
Datasheet download datasheet KMA4D5P20X Datasheet
Additional preview pages of the KMA4D5P20X datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA4D5P20X P-CH Trench MOSFET It’s mainly suitable for battery pack or power management in cell phone, and PDA. A F FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A : RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) G 1 3 6 4 B1 B C E D1 D D2 DIM A B B1 C D D1 D2 E F G MILLIMETERS _ 0.05 2.926 + _ 0.15 2.80 + _ 0.05 1.626 + _ 0.05 0.15 + 1.25 MAX _ 0.05 1.10 + 0~0.10 _ 0.08 0.45 + _ 0.05 0.95 + _ 0.05 0.
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