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SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.
KML0D3P20TV
P-Ch Trench MOSFET
FEATURES
VDSS=-20V, ID=-0.3A Drain-Soure ON Resistance : RDS(ON)=1.2 : RDS(ON)=1.6 : RDS(ON)=2.7 @ VGS=-4.5V @ VGS=-2.5V @ VGS=-1.8V
_ + _ + _ + _ + _ + _ + _ +
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC @TA=25 Drain Current DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient IDP IS P D* Tj Tstg RthJA* SYMBOL VDSS VGSS ID* -210 mA -650 125 170 150 -55 150 730 /W mW P-Ch -20 6 -300 UNIT V V
Note 1) *Surface Mounted on FR4 Board, t 5sec
2013. 2.
KML0D3P20TV Datasheet
