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KML0D6NP20EA - N and P-Ch Trench MOSFET

General Description

It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter.

Key Features

  • N-Channel : VDSS=20V, ID=600mA (RDS(ON)=0.70 : VDSS=20V, ID=500mA (RDS(ON)=0.85 : VDSS=20V, ID=350mA (RDS(ON)=1.25 P-Channel : VDSS=-20V, ID=-400mA (RDS(ON)=1.2 : VDSS=-20V, ID=-300mA (RDS(ON)=1.6 : VDSS=-20V, ID=-150mA (RDS(ON)=2.7 @ VGS=-4.5V). @ VGS=-2.5V). @ VGS=-1.8V). @ VGS=4.5V). @ VGS=2.5V). @ VGS=1.8V). C 1 6 2 C 5 D 3 4 P P DIM A A1 B B1 C D H J P.

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Datasheet Details

Part number KML0D6NP20EA
Manufacturer KEC
File Size 81.84 KB
Description N and P-Ch Trench MOSFET
Datasheet download datasheet KML0D6NP20EA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. KML0D6NP20EA N and P-Ch Trench MOSFET B B1 A1 A FEATURES N-Channel : VDSS=20V, ID=600mA (RDS(ON)=0.70 : VDSS=20V, ID=500mA (RDS(ON)=0.85 : VDSS=20V, ID=350mA (RDS(ON)=1.25 P-Channel : VDSS=-20V, ID=-400mA (RDS(ON)=1.2 : VDSS=-20V, ID=-300mA (RDS(ON)=1.6 : VDSS=-20V, ID=-150mA (RDS(ON)=2.7 @ VGS=-4.5V). @ VGS=-2.5V). @ VGS=-1.8V). @ VGS=4.5V). @ VGS=2.5V). @ VGS=1.8V). C 1 6 2 C 5 D 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 H 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6.