KTC3875S
KTC3875S is EPITAXIAL PLANAR NPN TRANSISTOR manufactured by KEC.
FEATURES
Excellent h FE Linearity : h FE(0.1m A)/h FE(2m A)=0.95(Typ.). High h FE : h FE=70 700. Low Noise : NF=1d B(Typ.), 10d B(Max.). plementary to KTA1504S. Suffix U : Qualified to AEC-Q101. ex) KTC3875S-GR-RTK/PU Suffix E : EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PE Suffix UE : Qualified to AEC-Q101 and EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PUE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
RATING 60 50 5 150 30 150 150
-55 150
UNIT V V V m A m A m W
EPITAXIAL PLANAR NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
1. EMITTER 2. BASE 3. COLLECTOR
SOT-23
Marking h FE Rank
ALType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO
VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=5V,...
