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KTC3875S - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ. ). High hFE : hFE=70 700. Low Noise : NF=1dB(Typ. ), 10dB(Max. ). Complementary to KTA1504S. Suffix U : Qualified to AEC-Q101. ex) KTC3875S-GR-RTK/PU Suffix E : EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PE Suffix UE : Qualified to AEC-Q101 and EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PUE.

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Datasheet Details

Part number KTC3875S
Manufacturer KEC
File Size 111.54 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3875S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE : hFE=70 700. Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA1504S. Suffix U : Qualified to AEC-Q101. ex) KTC3875S-GR-RTK/PU Suffix E : EOS(Electrical Over Stress) Capacity Enhanced Product. ex) KTC3875S-GR-RTK/PE Suffix UE : Qualified to AEC-Q101 and EOS(Electrical Over Stress) Capacity Enhanced Product.