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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES High Speed. Small Package. Enhancement-Mode.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature
VDS VGSS
ID PD Tch
Storage Temperature Range
Tstg
RATING 60 20 100 200 150
-55 150
UNIT V V mA mW
KTK5162S
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. SOURCE 2. GATE 3. DRAIN
SOT-23
EQUIVALENT CIRCUIT
D
G
Marking
KFType Name
Lot No.
KTK5162S Datasheet
