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7N60H - N-CHANNEL MOSFET

General Description

This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • RDS(on)=1.0Ω @ VGS=10V.
  • Ultra low gate charge (typical 27nC).
  • Low reverse transfer capacitance.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.1 JAN 2014 KIA.

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Datasheet Details

Part number 7N60H
Manufacturer KIA
File Size 411.39 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet 7N60H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KIA SEMICONDUCTORS 7.0A,600V N-CHANNEL MOSFET 7N60H 1.Description This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features  RDS(on)=1.0Ω @ VGS=10V  Ultra low gate charge (typical 27nC)  Low reverse transfer capacitance  Fast switching capability  Avalanche energy tested  Improved dv/dt capability, high ruggedness 3. Pin configuration Pin 1 2 3 4 1 of 6 Function Gate Drain Source Drain Rev 1.