SJMN11A60D Datasheet | Kodenshi AUK Group

Features - Drain-Source voltage: VDS=650V (@TJ=150C) - Low drain-source On resistance: RDS(on)=0.3Ω (Typ.) - Ultra low gate charge: Qg=23n C (Typ.) - Ro HS pliant device - 100% avalanche tested Ordering Information Part Number Marking Package SJMN11A60 TO-252 TO-252 Marking Information SJMN 11A60 Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS Tc=25C Tc=100C Tstg - Limited only maximum junction...