SJMN190R65B Datasheet | Kodenshi AUK Group

Features - Drain-Source voltage: VDS=700V (@TJ=150C) - Low drain-source On resistance: RDS(on)=0.19Ω (Max.) - Ultra low gate charge: Qg=20n C(Typ.) - Ro HS pliant device - 100% avalanche tested Ordering Information Part Number Marking Package N190R65 TO-263 GS TO-263 (D2-PAK) Marking Information SJMN 190R65 YWWZ Column 1: Manufacturer Column 2: Production Information e.g.) YWWN -. YWW: Data Code (year, week) -. Z: Management Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Diode dv/dt ruggedness (Note 3) VDSS VGSS Tc=25C ID Tc=100C IDM EAS IAR EAR PD dv/dt MOSFET dv/dt ruggedness (Note 4)...