Complementary to 2SB1114
1.70 0.1
0.42 0.1
0.46 0.1.
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
(Note.1)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
Electrical Characteristics Ta = 25℃
Symbol VCBO VCEO.
Full PDF Text Transcription for 2SD1614 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SD1614. For precise diagrams, and layout, please refer to the original PDF.
SMD Type NPN Transistors 2SD1614 Transistors ■ Features ● High DC Current Gain:hFE 135 to 600. ● Low VCE(sat) ● Complementary to 2SB1114 1.70 0.1 0.42 0.1 0.46 0.1 ■ Abso...
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VCE(sat) ● Complementary to 2SB1114 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse (Note.1) Collector Power Dissipation Junction Temperature Storage Temperature Range Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
2SD1614 Datasheet
