Download 2SD1614 Datasheet PDF
Kexin Semiconductor
2SD1614
Features - High DC Current Gain:h FE 135 to 600. - Low VCE(sat) - plementary to 2SB1114 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse (Note.1) Collector Power Dissipation Junction Temperature Storage Temperature Range Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%. - Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 40 20 6 2 3 2 150 -55 to 150 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 u A, IE= 0 VCEO Ic= 1 m A,IB= 0 VEBO IE= 100 u A, IC= 0 ICBO VCB= 40 V , IE= 0 IEBO...