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AO4815 - Dual P-Channel MOSFET

Datasheet Summary

Features

  • s.
  • VDS (V) = -30V.
  • ID = -8 A (VGS = -20V).
  • RDS(ON) ＜ 18mΩ (VGS = -20V).
  • RDS(ON) ＜ 20mΩ (VGS = -10V).
  • ESD Rating: 2KV HBM D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Lead Junction Temperature Stor.

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Datasheet Details

Part number AO4815
Manufacturer Kexin
File Size 961.83 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet AO4815 Datasheet
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Full PDF Text Transcription

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SMD Type Dual P-Channel MOSFET AO4815 (KO4815) SOP-8 +0.040.21 -0.02 ■ Features ● VDS (V) = -30V ● ID = -8 A (VGS = -20V) ● RDS(ON) ＜ 18mΩ (VGS = -20V) ● RDS(ON) ＜ 20mΩ (VGS = -10V) ● ESD Rating: 2KV HBM D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±25 -8 -6.9 -40 2 1.44 62.5 110 40 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.
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