Download DAN212K Datasheet PDF
Kexin Semiconductor
DAN212K
Features - Ultra high speed switching - High reliability Switching Diodes DAN212K (KAN212K) SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 +0.1 2.4 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 Diodes Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1 0-0.1 +0.1 0.38 -0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Reverse Voltage Reverse Voltage (DC) Average rectified forward current Forward Current Surge current (t=1us) Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VRM VR Io IFM Isurge Pd RθJA TJ Tstg Rating 80 80 100 300 4 200 556 150 -55 to 150 Unit V m A A m W ℃/W ℃ - Electrical Characteristics Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Capacitance between terminals Reverse recovery time Symbol Test Conditions VR IR= 100 u A VF IF= 100 m A VR= 70 V Ct VR= 6 V, f= 1 MHz trr VR=6V,IF=5m A, RL=50Ω Min Typ Max Unit 80 V 1.2 0.1 u A 3.5 p F 4 ns -...