Download ESDALC6V1M3R Datasheet PDF
Kexin Semiconductor
ESDALC6V1M3R
ESDALC6V1M3R is TVS Diodes manufactured by Kexin Semiconductor.
Features ƽ 2 unidirectional low capacitance diodes ƽ Breakdown Voltage VBR = 6.1 V min ƽ Low diode capacitance (11 p F typ at 0 V) ƽ Low leakage current < 0.5 μA ƽ Very small PCB area: 0.6 mm² SOT 883 (JEDEC MO-236AA pliant) Configuration I/O2 12 212 I/O1 G3ND Underside view Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Symbol Value Unit IEC 61000-4-2(ESD) Peak pulse power dissipation (8/20 μs) (Note 1) Repetitive peak pulse current (8/20 μs) Air Contact Tj initial = Ta ±15 ±8.0 Junction Temperature Tj Storage Temperature range Maximum lead temperature for soldering during 10s Tstg -55 to +150 ć Operating temperature range -40 to +125 Note 1.For a surge greater than the maximum values, the diode will fail in short-circuit. .kexin..cn 1 SMD Type Trans Disiotodress TVS Diodes ESDALC6V1M3R Ƶ Electrical Characteristics Ta =...