Download FZT591A Datasheet PDF
Kexin Semiconductor
FZT591A
FZT591A is PNP Silicon Planar Medium Power Transistor manufactured by Kexin Semiconductor.
Features - Power Collector dissipation: PC=2W - Continuous Collector Current: IC=-1A SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.70+0.1 -0.1 0.90+0.2 -0.2 7.00+0.3 -0.3 1 Base 2 Collector 3 Emitter 4 Collector - Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous Collector Current Peak collector current Power Collector dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO IC ICM PC Tj,Tstg Rating -40 -40 -5 -1 -2 2 -55 to +150 - Electrical Characteristics Ta = 25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage - Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage - Base-emitter saturation voltage - Base-emitter voltage - DC current gain Transition frequecy Output capacitance - Pulse test: tp ≤ 300 μs; d ≤ 0.02. - Marking Marking 591A Symbol Test conditons V(BR)CBO IC=-100μA V(BR)CEO IC=-10m A V(BR)EBO IE=-100μA ICBO VCB=-30V, IE=0 IEBO VEB=-4V,...