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KI1N60 - N-Channel Power MOSFET

Key Features

  • ƽ VDS (V) = 600V ƽ ID = 1 A ƽ RDS(ON) ˘ 10.5¡ (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction Temperature Storage Temperature Range TC=25ć TC=100ć TC=25ć Symbol VDS VGS ID IDM Ptot EAS TJ Tstg Rating 600 ±30 1 0.7 4 3 30 150 -55 to 150 Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Vo.

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SMD Type N-Channel Power MOSFET KI1N60 TraMnOsiSsFtoErsT Ƶ Features ƽ VDS (V) = 600V ƽ ID = 1 A ƽ RDS(ON) ˘ 10.5¡ (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction Temperature Storage Temperature Range TC=25ć TC=100ć TC=25ć Symbol VDS VGS ID IDM Ptot EAS TJ Tstg Rating 600 ±30 1 0.