KI1N60 Datasheet | Kexin Semiconductor

Features ƽ VDS (V) = 600V ƽ ID = 1 A ƽ RDS(ON) ˘ 10.5¡ (VGS = 10V) 1.70 0.1 0.42 0.1 0.46 0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction Temperature Storage Temperature Range TC=25ć TC=100ć TC=25ć Symbol VDS VGS IDM Ptot EAS TJ Tstg Rating 600 ±30 1 0.7 4 3 30 150 -55 to 150 Ƶ Electrical Characteristics Ta = 25ć Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage Note: Pulse test tpİ300ȝs, įİ2% Symbol VDSS IDSS IGSS VGS(th) RDS(On) Ciss Coss Crss VSD Test Conditions ID=250­A, VGS=0V VDS=600V, VGS=0V, TC=25ć VDS=480V, VGS=0V, TC=125ć VDS=0V, VGS=±30V VDS=VGS , ID=250­A VGS=10V, ID=0.5A VGS=0V, VDS=25V, f=1MHz IS=1A,VGS=0V Ƶ Marking Marking 1N60 1.Gate 2.Drain 3.Source Unit V W m J ć Min Typ Max Unit 1 ­A ±100 n...