KI1N60DS
KI1N60DS is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 600V
- ID = 0.4 A (VGS = 10V)
- RDS(ON) ＜ 30 Ω (VGS = 10V)
+0.2 2.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.2
+0.2 1.6 -0.1
Unit: mm 0.15 +0.02
-0.02
+0.2 1.1 -0.1
- Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current @ tp=10us
Tc=25℃ Tc=70℃
Power Dissipation
Tc=25℃
Single Pulse Drain- to- Source Avalanche Energy (IPK = 1.0 A)
Peak Diode Recovery (Note.1)
Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
Note.1: IS = 1.5 A, di/dt ≤ 100 A/u s, VDD ≤ BVDSS
Symbol VDS VGS
IDM PD EAS dv/dt Rth JA Rth JC TJ Tstg
Rating 600 ±30 0.4 0.25 1.5 0.4 13 4.5 141 2.7 150
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