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KI1N60DS - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 0.4 A (VGS = 10V).
  • RDS(ON) ＜ 30 Ω (VGS = 10V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G S.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current @ tp=10us Tc=25℃ Tc=70℃ Power Dissipation Tc=25℃ Single Pulse Drain.
  • to.
  • Source Aval.

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SMD Type N-Channel MOSFET KI1N60DS MOSFET ■ Features ● VDS (V) = 600V ● ID = 0.4 A (VGS = 10V) ● RDS(ON) ＜ 30 Ω (VGS = 10V) D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current @ tp=10us Tc=25℃ Tc=70℃ Power Dissipation Tc=25℃ Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A) Peak Diode Recovery (Note.1) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Note.1: IS = 1.