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KI3305DS - N-Channel MOSFET

Key Features

  • s.
  • VDS = 60V.
  • ID = 2.3 A (VGS = 10V).
  • RDS(ON) ＜ 156mΩ (VGS = 10V).
  • RDS(ON) ＜ 192mΩ (VGS = 4.5V) G1 S2 3D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.68 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Tc=25℃ Continuous Drain Current Tc=70℃ Note.1 Ta=25℃ Note.1 Ta=70℃ Pu.

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SMD Type N-Channel MOSFET KI3305DS MOSFET ■ Features ● VDS = 60V ● ID = 2.3 A (VGS = 10V) ● RDS(ON) ＜ 156mΩ (VGS = 10V) ● RDS(ON) ＜ 192mΩ (VGS = 4.5V) G1 S2 3D +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source 3.Drain 0-0.1 +0.1 0.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Tc=25℃ Continuous Drain Current Tc=70℃ Note.1 Ta=25℃ Note.1 Ta=70℃ Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy L=0.1mH Tc=25℃ Power Dissipation Note.1 Note.1 Tc=70℃ Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient t≤5s Thermal Resistance.