KI3N10DS
KI3N10DS is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
ƽ VDS (V) = 100V ƽ ID = 3 A ƽ RDS(ON) ˘ 160 mȍ (VGS = 10V) ƽ RDS(ON) ˘ 170 mȍ (VGS = 4.5V)
+0.2 2.8 -0.1
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.2
+0.2 1.6 -0.1
+0.2 1.1 -0.1
Unit : mm
0.15 +0.02 -0.02
1. Gate 2. Source 3. Drain
0-0.1 +0.1 0.68
-0.1
Ƶ Absolute Maximum Ratings (TA = 25ć unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation Thermal Resistance Junction- to-Ambient (Note 2) Junction Temperature Storage Temperature Range
Symbol VDS VGS ID IDM PD Rth JA TJ Tstg
Rating 100 ±20 3 20 1.5 100 150
-55 to 150
Unit V
A W ć/W ć
.kexin..cn 1
SMD Type
N-Channel MOSFET KI3N10DS
Tra Mn Osi Sst Fo Ers T
Ƶ Electrical Characteristics (TA = 25ć unless otherwise noted)
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage (Note 3)
Static Drain-Source On-Resistance (Note 3)
Forward Transconductance (Note 3) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body-Diode Forward Current (Note 2) Diode Forward Voltage (Note 3)
Symbol VDSS IDSS IGSS VGS(th)
RDS(On) g FS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS VSD
Test Conditions ID=250ȝA, VGS=0V VDS=100V, VGS=0V VDS=0V, VGS=±20V VDS=VGS , ID=250ȝA VGS=10V, ID=3A VGS=4.5V, ID=3A VDS=5V,...
