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KPA1816 - MOS Field Effect Transistor

Datasheet Summary

Features

  • 1.8V drive available Low on-state resistance RDS(on)1 = 15 m RDS(on)2 = 16 m RDS(on)3 = 22.5 m RDS(on)4 = 41.5 m TYP. (VGS = -4.5 V, ID = -4.5 A) TYP. (VGS = -4.0 V, ID = -4.5 A) TYP. (VGS = -2.5 V, ID = -4.5 A) TYP. (VGS = -1.8 V, ID = -2.5 A) TSSOP-8 Unit: mm 1, 2, 3 : Source 4: Gate Built-in G-S protection diode against ESD 5, 6, 7, 8: Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Ta = 25 Drain Curre.

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Datasheet Details

Part number KPA1816
Manufacturer Kexin
File Size 66.43 KB
Description MOS Field Effect Transistor
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Full PDF Text Transcription

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SMD Type MOS Field Effect Transistor KPA1816 IC IC Features 1.8V drive available Low on-state resistance RDS(on)1 = 15 m RDS(on)2 = 16 m RDS(on)3 = 22.5 m RDS(on)4 = 41.5 m TYP. (VGS = -4.5 V, ID = -4.5 A) TYP. (VGS = -4.0 V, ID = -4.5 A) TYP. (VGS = -2.5 V, ID = -4.5 A) TYP. (VGS = -1.8 V, ID = -2.5 A) TSSOP-8 Unit: mm 1, 2, 3 : Source 4: Gate Built-in G-S protection diode against ESD 5, 6, 7, 8: Drain Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Ta = 25 Drain Current (Pulse) *1 Total Power Dissipation(2 unit) *2 Channel Temperature Storage Temperature *1 PW 10 s, Duty cycle 1% Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating -12 8.0 9.0 36 2.
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