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KPA1890 - MOS Field Effect Transistor

Datasheet Summary

Features

  • Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A) MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A) MAX. (VGS = -4.5 V, ID = -2.5 A) MAX. (VGS = -4.0 V, ID = -2.5 A) TSSOP-8 Unit: mm 1 :Drain1 5 :Gate2 2, 3 :Source1 6, 7 :Source2 8 :Drain2 Built-in G-S protection diode against ESD 4 :Gate1.

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Datasheet Details

Part number KPA1890
Manufacturer Kexin
File Size 72.18 KB
Description MOS Field Effect Transistor
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Full PDF Text Transcription

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SMD Type MOS Field Effect Transistor KPA1890 IC IC Features Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A) MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A) MAX. (VGS = -4.5 V, ID = -2.5 A) MAX. (VGS = -4.0 V, ID = -2.
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