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NDT35N06 - N-Channel Enhancement MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 35 A.
  • RDS(ON) ＜ 23mΩ (VGS = 10V) 2,4.
  • RDS(ON) ＜ 33mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 37mΩ (VGS = 4V) 1 3 + 9.70 0.2 - 0.2 TO-252 6.50+ 0.15 - 0.15 5.30+ 0.2 - 0.2 4 + 1.50 0.15 - 0.15 2.30+ 0.1 - 0.1 0.50 + 0.8 - 0.7 Unit: mm 3.80 + 5.55 0.15 - 0.15 + 0.50 0.15 - 0.15 + 1.50 0.28 - 0.1 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 2.3 4.60+ 0.15 - 0.15 0.60+ 0.1 - 0.1 1 : Gate 2 : Drain 3 : Source 4 : Drain.
  • Absolute Maximum Ratin.

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SMD Type N-Channel Enhancement MOSFET NDT35N06 MOSFET ■ Features ● VDS (V) = 60V ● ID = 35 A ● RDS(ON) ＜ 23mΩ (VGS = 10V) 2,4 ● RDS(ON) ＜ 33mΩ (VGS = 4.5V) ● RDS(ON) ＜ 37mΩ (VGS = 4V) 1 3 + 9.70 0.2 - 0.2 TO-252 6.50+ 0.15 - 0.15 5.30+ 0.2 - 0.2 4 + 1.50 0.15 - 0.15 2.30+ 0.1 - 0.1 0.50 + 0.8 - 0.7 Unit: mm 3.80 + 5.55 0.15 - 0.15 + 0.50 0.15 - 0.15 + 1.50 0.28 - 0.1 0.80+0.1 -0.1 0.127 m ax + 0.25 2 .6 5 -0.1 2.3 4.60+ 0.15 - 0.15 0.60+ 0.1 - 0.1 1 : Gate 2 : Drain 3 : Source 4 : Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note.1) Avalanche Current (Note.2) Avalanche Energy (Single Pulse) (Note.