NDT8N20 Description
SMD Type N-Channel MOSFET NDT8N20 TraMnOsiSsFtoErsT.
NDT8N20 Key Features
- VDS =200V,ID =8A
- RDS(ON) <300mΩ @ VGS=10V（Typ：260mΩ）
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses