Datasheet Details
| Part number | CG2H30070F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.23 MB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H30070F-MACOM.pdf |
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Overview: CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT.
| Part number | CG2H30070F |
|---|---|
| Manufacturer | MACOM Technology Solutions |
| File Size | 1.23 MB |
| Description | RF Power GaN HEMT |
| Datasheet | CG2H30070F-MACOM.pdf |
|
|
|
The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).
The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and pressed amplifier circuits.
| Part Number | Description |
|---|---|
| CG2H40010 | RF Power GaN HEMT |
| CG2H40025 | RF Power GaN HEMT |
| CG2H40045 | RF Power GaN HEMT |
| CG2H40120 | 28V RF Power GaN HEMT |