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CG2H30070F - RF Power GaN HEMT

Datasheet Summary

Description

The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

  • 0.5 - 3.0 GHz.

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Datasheet Details

Part number CG2H30070F
Manufacturer MACOM
File Size 1.23 MB
Description RF Power GaN HEMT
Datasheet download datasheet CG2H30070F Datasheet
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Full PDF Text Transcription

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CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Description The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H30070F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Types: 440224 PN’s: CG2H30070F Features • 0.5 - 3.
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