CG2H40120
CG2H40120 is 28V RF Power GaN HEMT manufactured by MACOM Technology Solutions.
120 W, 28 V, RF Power GaN HEMT
Description
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and pressed amplifier circuits. The transistor is available in a flange and pill package.
Package Types: 440206 and 440223 PNs: CG2H40120P and CG2H40120F
Features
- Up to 2.5 GHz Operation
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 130 W Typical PSAT
- 70%...
