CG2H40120 Description
The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40120, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40120 ideal for linear and pressed amplifier circuits.
CG2H40120 Key Features
- Up to 2.5 GHz Operation
- 20 dB Small Signal Gain at 1.0 GHz
- 15 dB Small Signal Gain at 2.0 GHz
- 130 W Typical PSAT
- 70% Efficiency at PSAT
- 28 V Operation
CG2H40120 Applications
- Up to 2.5 GHz Operation