MX25U5121E
MX25U5121E is FLASH MEMORY manufactured by Macronix.
FEATURES
GENERAL
- Supports Serial Peripheral Interface -- Mode 0 and Mode 3
- 512Kb: 524,288 x 1 bit structure or 262,144 x 2 bit structure or 131,072 x 4 bit structure
1Mb: 1,048,576 x 1 bit structure or 524,288 x 2 bit structure or 262,144 x 4 bit structure
- 16 Equal Sectors with 4K bytes each (512Kb)
32 Equal Sectors with 4K bytes each (1Mb)
- Any Sector can be erased individually
- 1 Equal Blocks with 64K bytes each (512Kb) 2 Equal Blocks with 64K bytes each (1Mb)
- Any Block can be erased individually
- Program Capability
- Byte base
- Page base (32 bytes)
- Single Power Supply Operation
- 1.65 to 2.0 volt for read, erase, and program operations
- Latch-up protected to 100m A from -1V to Vcc +1V
PERFORMANCE
- Performance
- Normal Read:
- 30MHz
- Fast Read:
- 1 I/O: 70MHz with 8 dummy cycles
- 2 I/O: 70MHz with 8 dummy cycles, equivalent to 140MHz
- 4 I/O: 60MHz with 6 dummy cycles, equivalent to 240MHz
- Fast program time: 140us(typ.) and 400us(max.)/page
- Fast erase time: 55ms (typ.)/sector ; 400ms (typ.)/block
- Low Power Consumption
- Low active read current: 4m A(max.) at 30MHz, 8m A(max.) at 70MHz
- Low active programming current: 11m A (max.)
- Low active erase current: 12m A (max.)
- Low standby current: 8u A (typ.)
- Deep power down current: 2u A (typ.)
- Typical 100,000 erase/program cycles
- 20 years data retention
SOFTWARE FEATURES
- Input Data Format
- 1-byte mand code
- Block Lock protection
- The BP0~BP1 status bits defines the size of the area to be software protected against Program and Erase instructions
- Auto Erase and Auto Program Algorithm...