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MSN0409W - N-Channel MOSFET

Features

  • VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Lead Free.

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Datasheet Details

Part number MSN0409W
Manufacturer MORESEMI
File Size 693.40 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN0409W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN0409W 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =40V,ID =9A RDS(ON) < 16mΩ @ VGS=10V RDS(ON) < 24mΩ @ VGS=4.