Datasheet Summary
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
- VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V
(Typ:3.3mΩ)
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Lead Free
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking anMdSPO9r4d35eWring Information
Device Marking
Device
Device...