MSN04C0K - N-Channel MOSFET

Features

VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.3mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Lead Free.

MSN04C0K n-channel mosfet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSN04C0K
Manufacturer	MORESEMI
File Size	585.58 KB
Description	N-Channel MOSFET
Datasheet	MSN04C0K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN04C0K 40V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 40V,ID =200A RDS(ON) < 4mΩ @ VGS=10V (Typ:3.

Published: Oct 29, 2016 |