Datasheet Summary
40V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
- VDS =40V,ID =80A RDS(ON) <6.6mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Lead Free
Application
- PWM
- Load Switching
PIN Configuration
Marking and pin assignment
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-252-2L
Reel Size
- Tape width
- Quantity
-...