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MPQ1923-AEC1 - Half-Bridge Gate Driver

General Description

The MPQ1923-AEC1 is a high-frequency, Nchannel MOSFET, half-bridge gate driver.

Key Features

  • an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1923-AEC1 is available in QFN-10 (4mmx4mm) and QFN-8 (4mmx4mm) packages.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DESCRIPTION The MPQ1923-AEC1 is a high-frequency, Nchannel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and highside MOSFET (HS-FET) driver channels are controlled independently, and are matched with <5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET under-voltage lockout (UVLO) protection forces the outputs low. The MPQ1923-AEC1 also features an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1923-AEC1 is available in QFN-10 (4mmx4mm) and QFN-8 (4mmx4mm) packages.