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MPQ1925 - Half-Bridge Gate Driver

General Description

The MPQ1925 is a high-frequency, N-channel MOSFET, half-bridge gate driver.

The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are independently controlled, and are matched with less than 5ns in time delay.

Key Features

  • an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1925 is available in a QFN-8 (4mmx4mm) package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DESCRIPTION The MPQ1925 is a high-frequency, N-channel MOSFET, half-bridge gate driver. The device’s low-side MOSFET (LS-FET) and high-side MOSFET (HS-FET) driver channels are independently controlled, and are matched with less than 5ns in time delay. In the case of an insufficient supply, the device’s HS-FET and LS-FET under-voltage lockout (UVLO) protection forces the outputs low. The MPQ1925 also features an integrated bootstrap (BST) diode to reduce the external component count. The MPQ1925 is available in a QFN-8 (4mmx4mm) package.