MT8361N3
MT8361N3 is Dual N- & P-Channel Power MOSFET manufactured by MT Semiconductor.
Features
N-Channel
30V/8A
R DS(on) = 0.024Ω @ VGS = 10V
R DS(on) = 0.035Ω @ VGS = 4.5V
P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.5V
Absolute Maximum Ratings(TA = 25 unless otherwise noted)
P
Symbol
VDSS VGSS ID PD
TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
Package Marking and Ordering Information
Device Marking MT8361N3
Device MT8361N3
Reel Size 13"
N-CH
P-CH
-30
±20
±20...
