MT8361N3 Datasheet PDF (Dual N- & P-Channel Power MOSFET)

MT8361N3 - Dual N- & P-Channel Power MOSFET

Features

N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.5V Absolute Maximum Ratings(TA = 25 unless otherwise noted) P Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storag.

Datasheet Details

Part number	MT8361N3
Manufacturer	MT Semiconductor
File Size	1.29 MB
Description	Dual N- & P-Channel Power MOSFET
Datasheet	MT8361N3 Datasheet

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Full PDF Text Transcription

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MT8361N3 Dual N & P-Channel PowerTrench® MOSFET *HQHUDO'HVFULSWLRQ These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.

Published: Jul 2, 2025 |