MT8361N3 Datasheet Dual N- & P-channel Power MOSFET

Manufacturer: MT Semiconductor

Overview: MT8361N3 Dual N & P-Channel PowerTrench® MOSFET *HQHUDO'HVFULSWLRQ These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Datasheet Details

Part number	MT8361N3
Manufacturer	MT Semiconductor
File Size	1.29 MB
Description	Dual N- & P-Channel Power MOSFET
Datasheet	MT8361N3-MTSemiconductor.pdf

Key Features

N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.5V Absolute Maximum Ratings(TA = 25 unless otherwise noted) P Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storag.

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