MT8332N3 Datasheet | MT Semiconductor

Features ‡ 6XSSHUKLJKGHQVHFHOOGHVLJQIRUORZ R'621 ‡ 5XJJHGDQGUHOLDEOH ‡ Simple drive requirement ‡ DFN3- 3 Package Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous嘌@Tj=125ć Pulsed Drain Current B Maximum Power Dissipation嘌 Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 30 ±20 25 45 1.3 -55 to 150 Unit V V A A W ć THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambient嘌 Rth JA ć/W ZZZPWVHPLFRP ELECTRICAL CHARACTERISTICS (T A=25ć unless otherwise noted) Parameter OFF CHARACTERISTICS Symbol Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS BVDSS IDSS IGSS VGS=0V,ID=250 嘕 A VDS=24V,V GS =0V VGS = ±24V,VDS =0V Gate Threshold Voltage VGS(th) V DS=VGS,ID=250 嘕A Drain-Source On-State Resistance RDS(ON) VGS=10V,I D =10A VGS =4.5V,ID...