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MT8332N3 - N-Channel Enhancement Mode Field Effect Transistor

Features

  • ‡ 6XSSHUKLJKGHQVHFHOOGHVLJQIRUORZ R'6 21 ‡ 5XJJHGDQG.

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Datasheet Details

Part number MT8332N3
Manufacturer MT Semiconductor
File Size 964.24 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet MT8332N3 Datasheet

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Full PDF Text Transcription

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 MT8332N3 -Channel Enhanc ement Mode Field  Effect Transistor 3URGXFW6XPPDU PRODUCT SUMMARY VDSS ID RDS(ON) 30V 25A 10 m¡@ VGS=10V 15 m¡@ VGS=4.5V Features ‡ 6XSSHUKLJKGHQVHFHOOGHVLJQIRUORZ R'6 21 ‡ 5XJJHGDQGUHOLDEOH ‡ Simple drive requirement ‡ DFN3*3 Package Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Pulsed Drain Current B Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 30 ±20 25 45 1.
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