MT8350
MT8350 is N-Channel MOSFET manufactured by MT Semiconductor.
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low Low Gate Charge ESD protection Ro HS pliant.
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Load switch, battery switch in portable devices
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250μA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
TJ=125°C
1 μA
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
±10 μA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250μA
0.5 0.85 1.2
VGS=10V, ID=20A
1.45 1.8
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
TJ=125°C
2.05 2.6 mΩ
1.66 2.1
VGS=2.5V,...
