MT8302N3 Datasheet | MT Semiconductor

Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ Ro HS pliant. $SSOLFDWLRQV ‡ Notebook puter ‡Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.3m H C Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 11 8 50 22 73 3.1 2.0 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State RθJA 32 60 Maximum Junction-to-Lead C Steady-State RθJL...