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MT8302N3 - N-Channel MOSFET

Features

  • ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $.

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Datasheet Details

Part number MT8302N3
Manufacturer MT Semiconductor
File Size 334.47 KB
Description N-Channel MOSFET
Datasheet download datasheet MT8302N3 Datasheet

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Full PDF Text Transcription

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MT8302N3 1&KDQQHO(QKDQFHPHQW0RGH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS=30V ‡ ID=11A ‡ RDS(ON) 17.0m @VGS=10V ‡ RDS(ON) 19.0m @VGS=4.5V  Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C IDSM Pulsed Drain Current B IDM Avalanche Current C IAR Repetitive avalanche energy L=0.
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