MT8306N3
MT8306N3 is N-Channel MOSFET manufactured by MT Semiconductor.
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Ro HS pliant.
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Notebook puter Portable Battery Pack
DFN3X3-8L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
IDSM
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.3m HC
Power Dissipation
TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±20 20 15 120 32 75 2.8 1.6
-55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ t ≤ 10s Steady-State
RθJA
32 60
Steady-State
RθJL
Max 40 75...
