MT8332N5
MT8332N5 is 30V 25A MOSFET manufactured by MT Semiconductor.
Description
The MT8332N5 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
N-channel
P-channel
VDS (V) = 30V
-30V
ID = 25A (VGS=10V) -25A (VGS = -10V)
G1
RDS(ON) =10 m Ω(VGS=10V) =16 m Ω (VGS=4.5V)
RDS(ON) =10.5mΩ (VGS = -10V) =17mΩ (VGS =
- 4.5V)
100% Rg tested
DFN5X6-8L
D1
D2
G2
S1
S2
Top View
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
-30
Gate-Source Voltage
Continuous Drain Current
TC=25°C TC=100°C
±20
±20
-25...
