• Part: BUZ902
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Magna Tec
  • Size: 50.03 KB
Download BUZ902 Datasheet PDF
Magna Tec
BUZ902
BUZ902 is N-Channel MOSFET manufactured by Magna Tec.
FEATURES - HIGH SPEED SWITCHING - SEMEFAB DESIGNED AND DIFFUSED - HIGH VOLTAGE (220V & 250V) - HIGH ENERGY RATING R 4.0 ± 0.1 R 4.4 ± 0.2 - ENHANCEMENT MODE - INTEGRAL PROTECTION DIODES - PLIMENTARY P- CHANNEL BUZ907 & BUZ908 Case - Source TO- 3 Pin 1 - Gate .. Pin 2 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction - Case @ Tcase = 25°C BUZ902 220V ±14V 8A 8A 125W - 55 to 150°C 150°C 1°C/W BUZ903 250V Magnatec. Telephone (01455) 554711. Fax (01455) 558843. Prelim. 01/97 MAGNA Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)- BUZ902 BUZ903 STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BUZ902 BUZ903 IG = ±100µA ID = 100m A ID = 8A ID = 8A VDS = 220V IDSX Drain - Source Cut- Off Current VGS = -10V BUZ902 VDS = 250V BUZ903 yfs- Forward Transfer Admittance VDS = 10V ID = 3A 0.7 2 S 10 m A ID = 10m A Gate - Source Breakdown Voltage VDS = 0 Gate - Source Cut- Off Voltage Drain - Source Saturation Voltage Static - Source Resistance VDS = 10V VGD = 0 VGS =...